FPC Datasheet | Specifications & PDF Download

PD - 99438 HEXFET® Power MOSFET l l l l l l l IRFPC60LC-P D Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ci

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REV : 01 PRODUCT SPECIFICATION MODEL NUMBER Description Customer Motherboard number EX-T55HD533A01 5.5’’ HD +30PIN FPC Display SIGNATURE DATE PREP

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XB4A/XB4B 0.4-mm Pitch Board to FPC Connector www.DataSheet4U.com Low-profile type with a stacking height of 0.9 mm achieves easy operation and high

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HEXFET® Power MOSFET PD - 9.1234 IRFPC60LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Iso

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Power MOSFET IRFPC50, SiHFPC50 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V

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SMPS MOSFET PD- 91898 IRFPC50A Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching HEXFET®

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Power MOSFET IRFPC40, SiHFPC40 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V

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4 to 8GHz 10dB Directional Coupler FPC06073 www.dilabs.com www.knowlescapacitors.com DESCRIPTION DLI introduces its new high frequency surface mount

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FPC1011C Area Sensor Package Product Specification Features • Fingerprint area sensor • Internal A/D • High speed SPI interface • Reduced readout tim

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iscN-Channel MOSFET Transistor IRFPC60LC ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤0.4Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFPC42R FEATURES ·Drain Current –ID= 5.9A@ TC=25℃ ·Drain Source Vo

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www.vishay.com IRFPC60 Vishay Siliconix Power MOSFET D TO-247AC G S D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC)

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