FR106 Datasheet | Specifications & PDF Download

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION FR101 THRU FR107 FAST RECOVERY RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES *

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1.0A Fast Recovery Rectifier TF101 – TF107 FR101 – FR107 1.0A Fast Recovery Rectifier Features • Low forward voltage drop • High current capability •

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CREAT BY ART FR101G - FR107G 1.0AMP Glass Passivated Fast Recovery Rectifiers DO-41 Features Glass passivated chip junction High efficiency, Low VF

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FR101 THRU FR107 FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 V Forward Current - 1 A Features • High current capability • High reliability

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FR101W THRU FR107W Surface Mount Fast Recovery Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 1 A FEATURES ▪ For surface mounted applica

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FR101 - FR107 FAST RECOVERY RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 1.0 Ampere MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: U

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SOFT RECOVERY FAST SWITCHING RECTIFIER SFR101 THRU SFR107 VOLTAGE RANGE CURRENT 50 to 1000 Volts 1.0Ampere FEATURES • Low coat construction • Fast

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FR101 THRU FR107 FAST RECOVERY RECTIFIERS REVERSE VOLTAGE 50 to 1000 Volts FORWARD CURRENT 1.0 Ampere FEATURES The plastic package carries Underwrit

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SEP ELECTRONIC CORP. FR101 thru FR107 1.0 A Fast Recovery Silicon Rectifier Rectifier Reverse Voltage 50 to 1000V DO-41 Features Diffused junction

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi

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FR106 / FR107 1.0A FAST RECOVERY RECTIFIER Features NOT RECOMMENDED FOR NEW DESIGNS, PLEASE USE PR1006G - PR1007G · Plastic Package: UL Flammabili

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DC COMPONENTS CO., LTD. R FR101 THRU FR107 RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF FAST RECOVERY RECTIFIER VOLTAGE RANGE - 50 to 1000 Vol

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DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors NPN 5 GHz wideband

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BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers •

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Low Noise Silicon Bipolar RF Transistor • High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA • For UHF / VHF

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FR101S THRU FR107S FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere A-405 0.107(2.7) 0.080(2.0) DIA. 1.0 (2

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CREAT BY ART Fast Recovery Rectifiers FEATURES - High efficiency, low VF - High current capability - High reliability - High surge current capability

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isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 2.5 dB TYP. @VCE = 8 V, IC = 20 mA, f = 900 MHz ·High Gain ︱S21e︱2 = 10.5 dB TYP. @V

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     omponents 21201 Itasca Street Chatsworth  # $ % # DLFR106 THRU

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FR101W THRU FR107W Surface Mount Fast Recovery Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 1 A PINNING PIN 1 2 1 DESCRIPTION Cathode

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