FS41 Datasheet | Specifications & PDF Download

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NTMFS4122N Power MOSFET 30 V, 23 A, Single N−Channel, SO−8 Flat Lead Features www.DataSheet4U.com • Low RDS(on) • Low Inductance SO−8 Package • This

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NTMFS4121N Power MOSFET 30 V, 29 A, Single N-Channel, SO-8 Flat Lead Features www.DataSheet4U.com http://onsemi.com V(BR)DSS 30 V RDS(on) Typ 4.0 mW

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NTMFS4120N Power MOSFET 30 V, 31 A, Single N-Channel, SO-8 Flat Lead Features www.DataSheet4U.com http://onsemi.com V(BR)DSS 30 V RDS(on) Typ 3.5 mW

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NTMFS4119N Power MOSFET 30 V, 30 A, Single N-Channel, SO-8 Flat Lead Features www.DataSheet4U.com http://onsemi.com ID Max (Note 1) 30 A •ăLow RDS(o

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FEELING TECHNOLOGY Single Hall Effect Latch Features Wide operating voltage range: 3.0V to 28V Maximum output sink current 50mA Open-Collector pre-dri

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PD -97147 IRFS4115-7PPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switchin

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AUTOMOTIVE GRADE AUIRFS4127 AUIRFSL4127 Features  Advanced Process Technology  Ultra Low On-Resistance 175°C Operating Temperature Fast Swit

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www.DataSheet4U.com PD - 94927A Applications l l IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF HEXFET® Power MOSFET High frequency DC-

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high fr

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Applications l High frequency DC-DC converters Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Includ

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NTMFS4108N Power MOSFET 30 V, 35 A, Single N−Channel, SO−8 Flat Lead Package Features • Thermally and Electrically Enhanced Packaging Compatible with

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  AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avala

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Features  Advanced Process Technology  Ultra Low On-Resistance 175°C Operating Temperature Fast Switching  Repetitive Avalanche Allowed up to

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Isc N-Channel MOSFET Transistor IRFS41N15D ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·

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isc N-Channel MOSFET Transistor IRFS4127, IIRFS4127 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤22mΩ ·Enhancement mode: ·100% avalanche te

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test

Rating: 1 ★ (1 votes)