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6 Hits
• Drive Voltage : 4V • VDSS : 30 V • rDS(ON) (max) : 12.2 mΩ • ID : 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns
Outline
...
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6 Hits
ge
IC = 50 A, VGE = 15 V IC = 50 A, VGE = 15 V
Tvj = 25°C Tvj = 125°C
Gate-Schwellenspannung Gatethresholdvoltage
IC = 2,00 mA, VCE = VGE, Tvj =...
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5 Hits
g
Feb.1999
Typical value
MITSUBISHI Nch POWER MOSFET
FS3UM-18A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IG...
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5 Hits
Typical value
MITSUBISHI Nch POWER MOSFET
FS40SM-6
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS...
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5 Hits
current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature ...
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5 Hits
urrent Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature St...
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5 Hits
VGS = 0V VDS = 0V
Conditions
Ratings 150 ±20 50 200 50 50 200 150 –55 ~ +150 –55 ~ +150 4.8
Unit V V A A A A A W °C °C g
Feb.1999
L = 100µH
MITS...
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5 Hits
value VGS = 0V VDS = 0V
Conditions
Ratings 60 ± 20 50 200 50 50 200 70 –55 ~ +150 –55 ~ +150 2.0
4.5MAX.
Unit V V A A A A A W °C °C g
Feb.1999
L...
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5 Hits
• Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323...
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4 Hits
Unit V V A A W °C °C g
Feb.1999
Typical value
(1.5)
MITSUBISHI Nch POWER MOSFET
FS3VS-16A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Sym...
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4 Hits
Extremely Sensitive Flat Response to 23 KHz Low-Noise Output 2.7V to 7V Operation Available in SIP-3L package
FS50
Pb Free
General Description
The ...
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