FEELING TECHNOLOGY LINEAR HALL-EFFECT SENSORS Feat.
Feeling Technology
FS50 - LINEAR HALL-EFFECT SENSORS
FEELING TECHNOLOGY LINEAR HALL-EFFECT SENSORS Features Extremely Sensitive Flat Response to 23 KHz Low-Noise Output 2.7V to 7V Operation Available in .
Mitsubishi Electric Semiconductor
FS50AS-03 - Nch POWER MOSFET
MITSUBISHI Nch POWER MOSFET FS3UM-18A HIGH-SPEED SWITCHING USE FS3UM-18A OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 φ 3.6 3..
Mitsubishi Electric Semiconductor
FS50KM-06 - Nch POWER MOSFET
MITSUBISHI Nch POWER MOSFET FS3VS-18A HIGH-SPEED SWITCHING USE FS3VS-18A OUTLINE DRAWING r Dimensions in mm 4.5 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 .
Mitsubishi Electric Semiconductor
FS50SM-2 - Nch POWER MOSFET
MITSUBISHI Nch POWER MOSFET FS50KM-06 HIGH-SPEED SWITCHING USE FS50KM-06 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 1.
Mitsubishi Electric Semiconductor
FS50SMJ-06 - Nch POWER MOSFET
MITSUBISHI Nch POWER MOSFET FS50SM-06 HIGH-SPEED SWITCHING USE FS50SM-06 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 5.0 f 3.2 2 2 4 .
Renesas
FS50ASJ-03F - N-channel MOSFET
FS50ASJ-03F High-Speed Switching Use Nch Power MOS FET Features • Drive Voltage : 4V • VDSS : 30 V • rDS(ON) (max) : 12.2 mΩ • ID : 50 A • Recovery T.
Mitsubishi Electric Semiconductor
FS50ASJ-03 - Nch POWER MOSFET
MITSUBISHI Nch POWER MOSFET FS3VS-10 HIGH-SPEED SWITCHING USE FS3VS-10 OUTLINE DRAWING r 1.5MAX. Dimensions in mm 4.5 1.3 10.5MAX. 1.5MAX. 8.6 ±.
Mitsubishi Electric Semiconductor
FS50SM-06 - Nch POWER MOSFET
MITSUBISHI Nch POWER MOSFET FS4VS-12 HIGH-SPEED SWITCHING USE FS4VS-12 OUTLINE DRAWING r Dimensions in mm 4.5 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3..
Mitsubishi Electric Semiconductor
FS50KMJ-03 - Nch POWER MOSFET
MITSUBISHI Nch POWER MOSFET FS50KM-2 HIGH-SPEED SWITCHING USE FS50KM-2 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 .
Mitsubishi Electric Semiconductor
FS50SM-3 - Nch POWER MOSFET
MITSUBISHI Nch POWER MOSFET FS50KMJ-03 HIGH-SPEED SWITCHING USE FS50KMJ-03 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 .
Mitsubishi Electric Semiconductor
FS50KMJ-06 - Nch POWER MOSFET
MITSUBISHI Nch POWER MOSFET FS50KMJ-06 HIGH-SPEED SWITCHING USE FS50KMJ-06 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 .
Mitsubishi Electric Semiconductor
FS50SMJ-03 - Nch POWER MOSFET
MITSUBISHI Nch POWER MOSFET FS50KMJ-2 HIGH-SPEED SWITCHING USE FS50KMJ-2 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 1.
Mitsubishi Electric Semiconductor
FS50SMJ-2 - Nch POWER MOSFET
MITSUBISHI Nch POWER MOSFET FS50SM-3 HIGH-SPEED SWITCHING USE FS50SM-3 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 5.0 f 3.2 2 2 4 20..
Mitsubishi Electric Semiconductor
FS50SMJ-3 - Nch POWER MOSFET
MITSUBISHI Nch POWER MOSFET FS50SMJ-06 HIGH-SPEED SWITCHING USE FS50SMJ-06 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 5.0 f 3.2 2 2 4 .
NXP
BFS505 - NPN 9 GHz wideband transistor
DISCRETE SEMICONDUCTORS DATA SHEET BFS505 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995.
Renesas Technology
FS50SM-5A - N-channel MOSFET
www.DataSheet4U.com FS50SM-5A High-Speed Switching Use Nch Power MOS FET REJ03G0277-0100 Rev.1.00 Aug.20.2004 Features • • • • Drive voltage : 10 V .
SemiHow
HFS50N06 - 60V N-Channel MOSFET
HFS50N06 July 2005 HFS50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 18 mΩ ID = 50 A FEATURES Originative New Design Superior Avalanche Rug.
Infineon
FS500R17OE4D - IGBT
Technische Information / Technical Information IGBT-Modul IGBT-Module FS500R17OE4D EconoPACK™+ Modul mit Trench/Feldstopp IGBT4 und Emitter Control.
Infineon
FS500R17OE4DP - IGBT
FS500R17OE4DP EconoPACK™+ Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 Diode und PressFIT / bereits aufgetragenem Thermal Interface Mater.
Mitsubishi Electric Semiconductor
FS50KMJ-2 - Nch POWER MOSFET
MITSUBISHI Nch POWER MOSFET FS3VS-16A HIGH-SPEED SWITCHING USE FS3VS-16A OUTLINE DRAWING r Dimensions in mm 4.5 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 .