FS50 Datasheet | Specifications & PDF Download

MITSUBISHI Nch POWER MOSFET FS3VS-18A HIGH-SPEED SWITCHING USE FS3VS-18A OUTLINE DRAWING r Dimensions in mm 4.5 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5

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FEELING TECHNOLOGY LINEAR HALL-EFFECT SENSORS Features Extremely Sensitive Flat Response to 23 KHz Low-Noise Output 2.7V to 7V Operation Available in

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Technische Information / Technical Information IGBT-Modul IGBT-Module FS500R17OE4D EconoPACK™+ Modul mit Trench/Feldstopp IGBT4 und Emitter Control

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MITSUBISHI Nch POWER MOSFET FS50KMJ-03 HIGH-SPEED SWITCHING USE FS50KMJ-03 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2

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www.DataSheet4U.com FS50SM-5A High-Speed Switching Use Nch Power MOS FET REJ03G0277-0100 Rev.1.00 Aug.20.2004 Features • • • • Drive voltage : 10 V

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MITSUBISHI Nch POWER MOSFET FS3UM-18A HIGH-SPEED SWITCHING USE FS3UM-18A OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 φ 3.6 3.

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MITSUBISHI Nch POWER MOSFET FS50SMJ-06 HIGH-SPEED SWITCHING USE FS50SMJ-06 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 5.0 f 3.2 2 2 4

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FS50ASJ-03F High-Speed Switching Use Nch Power MOS FET Features • Drive Voltage : 4V • VDSS : 30 V • rDS(ON) (max) : 12.2 mΩ • ID : 50 A • Recovery T

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FS50R12W1T7 EasyPACK™ Modul mit TRENCHSTOP™ IGBT7 und Emitter Controlled 7 Diode und NTC EasyPACK™ module with TRENCHSTOP™IGBT7 and Emitter Controlled

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FS500R17OE4DP EconoPACK™+ Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 Diode und PressFIT / bereits aufgetragenem Thermal Interface Mater

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MITSUBISHI Nch POWER MOSFET FS50SM-06 HIGH-SPEED SWITCHING USE FS50SM-06 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 5.0 f 3.2 2 2 4

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MITSUBISHI Nch POWER MOSFET FS50UM-3 HIGH-SPEED SWITCHING USE FS50UM-3 OUTLINE DRAWING 10.5MAX. r Dimensions in mm 4.5 1.3 3.2 16 12.5MIN. 3.

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DISCRETE SEMICONDUCTORS DATA SHEET BFS505 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Typical IR less than 5.0µA  Rugged 2.54

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HFS50N06 July 2005 HFS50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 18 mΩ ID = 50 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rug

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Technische Information / Technical Information IGBT-Module IGBT-modules FS50R06W1E3_B11 EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Contr

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche

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MITSUBISHI Nch POWER MOSFET FS3VS-10 HIGH-SPEED SWITCHING USE FS3VS-10 OUTLINE DRAWING r 1.5MAX. Dimensions in mm 4.5 1.3 10.5MAX. 1.5MAX. 8.6 ±

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MITSUBISHI Nch POWER MOSFET FS50KMJ-06 HIGH-SPEED SWITCHING USE FS50KMJ-06 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2

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MITSUBISHI Nch POWER MOSFET FS50SM-3 HIGH-SPEED SWITCHING USE FS50SM-3 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 5.0 f 3.2 2 2 4 20.

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