Global Mixed-mode Technology G2002/G2002B 5+1CH .
LITE-ON
UG2002 - ULTRA FAST GLASS PASSIVATED RECTIFIERS
LITE-ON SEMICONDUCTOR ULTRA FAST GLASS PASSIVATED RECTIFIERS UG2001 thru UG2007 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes FEA.
Global Mixed-mode Technology
G2002 - 5+1CH serial input motor driver
Global Mixed-mode Technology G2002/G2002B 5+1CH serial input motor driver IC for DSC Features Build-in one micro-steps drive mode is possible fro.
Global Mixed-mode Technology
G2002B - 5+1CH serial input motor driver
Global Mixed-mode Technology G2002/G2002B 5+1CH serial input motor driver IC for DSC Features Build-in one micro-steps drive mode is possible fro.
Toshiba Semiconductor
TG2002V - 1.9GHz BAND POWER AMPLIFIER MODULE (PHS DIGITAL CORDLESS TELEPHONE)
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Diodes Incorporated
UG2002 - 2.0A ULTRA-FAST GLASS PASSIVATED RECTIFIER
NOT RECOMMENDED FOR NEW DESIGN UG2001 - UG2007 2.0A ULTRA-FAST GLASS PASSIVATED RECTIFIER Features • Glass Passivated Die Construction • Ultra-Fast .
NXP
PMEG2002AESF - 0.2 A low VF MEGA Schottky barrier rectifier
PMEG2002AESF 8 October 2013 20 V, 0.2 A low VF MEGA Schottky barrier rectifier Product data sheet 1. General description Planar Maximum Efficiency .
nexperia
PMEG2002AESF - MEGA Schottky barrier rectifier
PMEG2002AESF 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 10 March 2017 Product data sheet 1. General description Planar Maximum Efficiency .
nexperia
PMEG2002AESFB - MEGA Schottky barrier rectifier
PMEG2002AESFB 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 17 August 2017 Product data sheet 1. General description Planar Maximum Efficienc.
nexperia
PMEG2002ESF - MEGA Schottky barrier rectifier
PMEG2002ESF 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 10 March 2017 Product data sheet 1. General description Planar Maximum Efficiency G.
GOFORD
G2002A - N-Channel Enhancement Mode Power MOSFET
G2002A N-Channel Enhancement Mode Power MOSFET Description The G2002A uses advanced trench technology to provide excellent RDS(ON) , low gate charge.
