G2301 Datasheet | Specifications & PDF Download

DMG2301L P-CHANNEL ENHANCEMENT MODE MOSFET N EN EWWP RPORDOUDCUTC T Product Summary BVDSS -20V RDS(ON) Max 120mΩ @ VGS = -4.5V 150mΩ @ VGS = -2.5V

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Product Summary BVDSS RDS(ON) Max -20V 160mΩ @ VGS = -4.5V 210mΩ @ VGS = -2.5V ID Max TA = +25°C -2.4A -2.1A DMG2301LK P-CHANNEL ENHANCEMENT MOD

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NEW PRODUCT YM NOT RECOMMENDED FOR NEW DESIGN USE DMG2301L DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -20V RDS(ON) max 80m

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187 info@e-switch.com SCHEMATIC EG 1218 www.e-switch.com CAP OPTIONS P.C. MOUNTING P.C. MOUNTING SCHEMATIC DETECTOR SWITCHES ROTARY SWITCHES

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DG2301 New Product Vishay Siliconix High-Speed, Low rON, SPST Analog Switch (1-Bit Bus Switch) FEATURES D D D D D D SC-70 5-Lead Package 5-W Switch

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DATA SHEET NEC's POWER AMPLIFIER FOR BLUETOOTH™ CLASS 1 UPG2301TQ DISCONTINUED FEATURES • OPERATION FREQUENCY fopt = 2,400 to 2,500 MHz (2 450 MHz

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www.DataSheet4U.com Pb Free Plating Product CORPORATION G2301 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2004/10/12 REVISED DATE :2005/03

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DG2301 New Product Vishay Siliconix High-Speed, Low rON, SPST Analog Switch (1-Bit Bus Switch) FEATURES D D D D D D SC-70 5-Lead Package 5-W Switch

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www.DataSheet4U.com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com

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DISCONTINUED GaAs HBT INTEGRATED CIRCUIT PG2301T5L POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The PG2301T5L is GaAs HBT MMIC for power a

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Elektronische Bauelemente SMG2301P -2.6 A, -20 V, RDS(ON) 130 m P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halo

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SMG2301 Elektronische Bauelemente -2.6A, -20V,RDS(ON) 130m P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of -C specifi

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