G40 Datasheet | Specifications & PDF Download

SGH40N60UFD SGH40N60UFD Ultra-Fast IGBT IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low

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TrenchStop® Series IGW40T120 Low Loss IGBT in TrenchStop® and Fieldstop technology C  Short circuit withstand time – 10s  Designed for : - Freq

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FGA40N60UFD IGBT FGA40N60UFD Ultrafast IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low con

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WG40N120MFW1 IGBT Rev.01 - 19 June 2024 Product data sheet 1. General description WG40N120MFW1 uses advanced Fine Trench Field-stop IGBT technology

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WG40N120UFW1 IGBT Rev.01 - 12 July 2024 Product data sheet 1. General description WG40N120UFW1 uses advanced Fine Trench Field-stop IGBT technology

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FGL40N150D IGBT FGL40N150D General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The

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WG40N65DFW IGBT Rev.02 - 19 September 2023 Product data sheet 1. General description 40A 650V Trench Fieldstop IGBT with antiparallel diode in TO247

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TRIAC(Through Hole / Isolated) TMG40C60J Typical Applications Triac TMG40C60J is designed for full wave AC control applications. It can be used as a

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WG40N120HFW1 IGBT Rev.01 - 19 June 2024 Product data sheet 1. General description WG40N120HFW1 uses advanced Fine Trench Field-stop IGBT technology

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HGTG40N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT The HGTG40N60A4 is a MOS gated high voltage switching device combinin

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PMEG4050CEP-Q 40 V, 5 A low VF Schottky barrier rectifier 10 March 2025 Product data sheet 1. General description Planar Schottky barrier rectifier

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IGBT High speed IGBT in Trench and Fieldstop technology IGW40N60H3 600V IGBT High speed switching series third generation Data Sheet Industrial Power

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CRG40T75AK5SD CRG40T75AK5SD FS IGBT ， VCES ，。 IC 750 V 40 A RoHS 。 Ptot （TC=25℃） 250 W VCE(sat) 1.45 V ： TO-247 ● FS ， ； ● ：VCE(

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Silicon FS Trench IGBT CRG40T120AK5HDZ General Description： Using owner proprietary trench design and advanced Field Stop (FS) technology, offering s

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HGTG40N60C3 Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT The HGTG40N60C3 is a MOS gated high voltage switching device combining the

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WESTCODE An IXYS Company Date:- 27 Sep, 2004 Data Sheet Issue:- 1 Anode Shorted Gate Turn-Off Thyristor Type G4000EC450 Absolute Maximum Ratings V

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TO-264 Pin Definition: 1. Gate 2. Collector 3. Emitter TSG40N120CE N-Channel IGBT with FRD. PRODUCT SUMMARY VCES (V) VGES (V) 1200 ±20 IC (A)

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GOFORD N-Channel Enhancement Mode Power MOSFET Description The G40N03A uses advanced trench technology and design to provide excellent RDS(ON) with lo

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