logo

GC2X10MPS12-247 Datasheet, Features, Application

GC2X10MPS12-247 Silicon Carbide Schottky Diode

GC2X10MPS12-247 1200 V SiC MPS™ Diode Silicon C.

GeneSiC

GC2X10MPS12-247 - Silicon Carbide Schottky Diode

GC2X10MPS12-247 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features  High Avalanche (UIS) Capability  Enhanced Surge Current Capability .
1.0 · rating-1
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts