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GP-90 Datasheet, Features, Application

GP-90 Triggered Spark Gaps

Triggered Spark Gaps EVERYTHING IN A NEW LIGHT. .

Leadtrend Technology

LD7904JGP7 - Green Mode Power Switch

LD7904JGP7 3/21/2012 Green Mode Power Switch REV:00b General Description The LD7904JGP7 is a green mode PWM chip integrated with a 700V MOSFET in a .
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Airoha Technology

AP6682 - Quad-band G850/G900/DCS1800/PCS1900 GPRS Front-end Module

AP6682 Quad-band G850/G900/DCS1800/PCS1900 GPRS Front-end Module Datasheet VERSION 1.00 13-Mar-2013 This document is commercially confidential and mus.
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MACOM

MA4GP907 - GaAs Flip Chip PIN

MA4GP907 GaAs Flip Chip PIN Features  Low Series Resistance  Ultra Low Capacitance  Millimeter Wave Switching & Cutoff Frequency  2 ns Switching S.
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ETC

Q2406A - SELF CONTAINED E GSM/GPRS 900/1800 OR 850/1900 BI BAND MODULE

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Goodpoly

GP60-090 - PPTC Thermistors

GP60 Series PPTC Thermistors (PPTC Resettable Fuses) Shenzhen Goodpoly Electron Co., Ltd. ¡÷ ¡÷ ¡÷ Radial leaded devices Very high voltage surge cap.
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Leadtrend Technology

LD7904JGPN - Green Mode Power Switch

LD7904JGPN 4/25/2012 Green Mode Power Switch with BNO REV:01 General Description The LD7904JGPN is a green mode PWM chip integrated with a 700V MOSF.
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VANCHIP

VC7590 - Quad-band GSM / GPRS / EDGE / TD-SCDMA Multimode RF module

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MPS

HF900GPR - 900V Offline Switching Regulator

The Future of Analog IC Technology HF900 900V Offline Switching Regulator DESCRIPTION The HF900 is a flyback regulator with an integrated 900V MOSFE.
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STMicroelectronics

STGP18N40LZ - Automotive-grade 390V internally clamped IGBT

7$% 7$% ,3$.      72 STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr.
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Silicon Standard

SSM90T03GP - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM90T03GP,S N-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement D Fast switching G Pb-free, RoHS compliant. S DES.
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Motorola

HC908GP32CB - MC68HC908GP32CB

Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... MC68HC908GP32 MC68HC08GP32 Technical Data M68HC08 Microcontrollers MC68HC908GP32/H Re.
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Freescale Semiconductor

MC68HC908GP32 - Microcontrollers

MC68HC908GP32 Data Sheet M68HC08 Microcontrollers MC68HC908GP32 Rev. 10 1/2008 freescale.com MC68HC908GP32 Data Sheet To provide the most up-to-date .
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O2Micro

OZ990 - Intelligent Manager Smart PMU/GPIO

FEATURES • SMBus 1.0 Compliant • Support Pentium class and x86-based designs • PMU, GPIO, and Alternative PMU modes • WAKE output and Suspend Status i.
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Advanced Power Electronics

AP9990GP-HF-3 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP9990GP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Per.
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International Rectifier

IRGP4790PBF - Insulated Gate Bipolar Transistor

  VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75A Applications  Industrial Motor Drive  UPS  Solar I.
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International Rectifier

IRGP4790-EPbF - Insulated Gate Bipolar Transistor

  VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75A Applications  Industrial Motor Drive  UPS  Solar I.
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International Rectifier

IRGP4690DPBF - INSULATED GATE BIPOLAR TRANSISTOR

IRGP4690DPbF IRGP4690D-EPbF VCES = 600V IC = 90A, TC = 100°C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE CC C tSC ≥ 5μs,.
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International Rectifier

IRGP4690D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR

IRGP4690DPbF IRGP4690D-EPbF VCES = 600V IC = 90A, TC = 100°C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE CC C tSC ≥ 5μs,.
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International Rectifier

IRGP4790DPbF - INSULATED GATE BIPOLAR TRANSISTOR

  IRGP4790DPbF IRGP4790D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  tSC 5.5µs.
1.0 · rating-1
International Rectifier

IRGP4790D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR

  IRGP4790DPbF IRGP4790D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  tSC 5.5µs.
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