Part Number | Description | Manufacture |
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PNP Silicon RF Power Transistor |
![]() ASI |
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Silicon Power Schottky Diode • High Surge Capability • Types from 30 V to 40V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N6097 thru 1N6098R VRRM = 30 V - 40 V IF(AV) = 50 A DO-5 Package Maximu |
![]() GeneSiC |
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TELECOMMUNICATIONS TRANSFORMERS |
![]() apx |
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Silicon NPN Power Transistor specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A; IB= 100mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 100mA V(BR)CEO Colle |
![]() Inchange Semiconductor |
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Silicon Power Schottky Diode • High Surge Capability • Types from 30 V to 40V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N6097 thru 1N6098R VRRM = 30 V - 40 V IF(AV) = 50 A DO-5 Package Maximu |
![]() GeneSiC |
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(1N6097 - 1N6098R) Schottky Power Diode • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity 1N6097 thru 1N6098R DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Repetitive peak r |
![]() Naina Semiconductor |
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(1N6097 - 1N6098R) Schottky Power Diode • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity 1N6097 thru 1N6098R DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Repetitive peak r |
![]() Naina Semiconductor |
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Control Transformer |
![]() TEMCo |
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8-ch level shift driver IC • High withstanding voltage : 20 V (MAX.) • Supports low-voltage input (logic power supply voltage : 3.0 to 3.6 V) • Includes 8 level shifters (among which 2 circuits can switch between normal and inverted output) • Small thin package : 24-pin plasti |
![]() NEC |
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(1N6097 - 1N6098R) Schottky Power Diode • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity 1N6097 thru 1N6098R DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Repetitive peak r |
![]() Naina Semiconductor |
Total 23 results |