.
Galaxy Semi-Conductor Holdings
SBL3035PT - (SBL3030PT - SBL30100PT) SCHOTTKY BARRIER RECTIFIER
BLGALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,l.
Galaxy Semi-Conductor Holdings Limited
SS210A - (SS22A - SS210A) SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
BL FEATURES GALAXY ELECTRICAL SS22A---SS210A REVERSE VOLTAGE: 20 - 100 V FORWARD CURRENT: 2.0 A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS (DO-214A.
Galaxy Semi-Conductor Holdings Limited
2SC4081W - Silicon Epitaxial Planar Transistor
BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z Excellent hFE linearity. Complements the 2A1576A Production specification 2SC4.
Galaxy Semi-Conductor Holdings
SBL3030PT - (SBL3030PT - SBL30100PT) SCHOTTKY BARRIER RECTIFIER
BLGALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,l.
Galaxy Semi-Conductor Holdings
1N6263 - SMALL SIGNAL SCHOTTKY DIODE
BL GALAXY ELECTRICAL SMALL SIGNAL SCHOTTKY DIODE FEATURES For general purpose applications Metal silicon schottky barrier device which is protected by.
Galaxy Semi-Conductor Holdings Limited
BYM26A - SUPER FAST RECTIFIER
BL GALAXY ELECTRICAL SUPER FAST RECTIFIER FEATURES Low cost Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,I.
Galaxy Semi-Conductor Holdings Limited
2SB709A - Silicon Epitaxial Planar Transistor
BL Galaxy Electrical www.DataSheet4U.com Production specification Silicon Epitaxial Planar Transistor High forward current transfer ratio hFE. Mini .
Galaxy Semi-Conductor Holdings
SBL3045PT - (SBL3030PT - SBL30100PT) SCHOTTKY BARRIER RECTIFIER
BLGALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,l.
Galaxy Semi-Conductor Holdings Limited
BYM26AZ - SUPER FAST RECTIFIER
BL GALAXY ELECTRICAL SUPER FAST RECTIFIER BYM26A(Z) --- BYM26E(Z) VOLTAGE RANGE: 200 --- 1000 V CURRENT: 2.3 A FEATURES Low cost Low leakage Low for.
Galaxy Semi-Conductor Holdings
SBL30100PT - (SBL3030PT - SBL30100PT) SCHOTTKY BARRIER RECTIFIER
BLGALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,l.
Galaxy Semi-Conductor Holdings
SBL3040PT - (SBL3030PT - SBL30100PT) SCHOTTKY BARRIER RECTIFIER
BLGALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,l.
Galaxy Semi-Conductor Holdings Limited
BYM26B - SUPER FAST RECTIFIER
BL GALAXY ELECTRICAL SUPER FAST RECTIFIER FEATURES Low cost Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,I.
Galaxy Semi-Conductor Holdings Limited
BYM26E - SUPER FAST RECTIFIER
BL GALAXY ELECTRICAL SUPER FAST RECTIFIER FEATURES Low cost Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,I.
Galaxy Semi-Conductor Holdings Limited
BYM26DZ - SUPER FAST RECTIFIER
BL GALAXY ELECTRICAL SUPER FAST RECTIFIER BYM26A(Z) --- BYM26E(Z) VOLTAGE RANGE: 200 --- 1000 V CURRENT: 2.3 A FEATURES Low cost Low leakage Low for.
Galaxy Semi-Conductor Holdings Limited
BYM26EZ - SUPER FAST RECTIFIER
BL GALAXY ELECTRICAL SUPER FAST RECTIFIER BYM26A(Z) --- BYM26E(Z) VOLTAGE RANGE: 200 --- 1000 V CURRENT: 2.3 A FEATURES Low cost Low leakage Low for.
Galaxy Semi-Conductor Holdings Limited
ERB43-04 - FAST RECOVERY RECTIFIER
BL FEATURES GALAXY ELECTRICAL www.DataSheet4U.com ERB43-02---EB43-04 FAST RECOVERY RECT IFIER VOLT AGE RANGE: 200 --- 400 V CURRENT : 0.5 A Low c.
Galaxy Semi-Conductor Holdings Limited
2SC3356W - Silicon NPN Transistor
www.DataSheet4U.com BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,.
Galaxy Semi-Conductor Holdings Limited
KTC3265 - NPN Silicon Epitaxial Planar Transistor
BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES z z z z z High DC current gain: hFE:100-320 Low saturation voltage. Suitable for.
Galaxy Semi-Conductor Holdings Limited
BYD33D - FAST RECOVERY RECTIFIERS
BL FEATURES Low cos t GALAXY ELECTRICAL BYD33D(Z)---BYD33M(Z) VOLTAGE RANGE: 200 --- 1000 V CURRENT: 1.3 A www.DataSheet4U.com FAST RECOVERY RECTI.
Galaxy Semi-Conductor Holdings Limited
BYM26BZ - SUPER FAST RECTIFIER
BL GALAXY ELECTRICAL SUPER FAST RECTIFIER BYM26A(Z) --- BYM26E(Z) VOLTAGE RANGE: 200 --- 1000 V CURRENT: 2.3 A FEATURES Low cost Low leakage Low for.