Galaxy Semi-Conductor Holdings Datasheet | Specifications & PDF Download

BL FEATURES GALAXY ELECTRICAL SS22A---SS210A REVERSE VOLTAGE: 20 - 100 V FORWARD CURRENT: 2.0 A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS (DO-214A

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BL Galaxy Electrical www.DataSheet4U.com Production specification Silicon Epitaxial Planar Transistor High forward current transfer ratio hFE. Mini

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BL FEATURES GALAXY ELECTRICAL SS22A---SS210A REVERSE VOLTAGE: 20 - 100 V FORWARD CURRENT: 2.0 A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS (DO-214A

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BL FEATURES Low cos t GALAXY ELECTRICAL BYD33D(Z)---BYD33M(Z) VOLTAGE RANGE: 200 --- 1000 V CURRENT: 1.3 A www.DataSheet4U.com FAST RECOVERY RECTI

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BL FEATURES Low cos t GALAXY ELECTRICAL BYD33D(Z)---BYD33M(Z) VOLTAGE RANGE: 200 --- 1000 V CURRENT: 1.3 A www.DataSheet4U.com FAST RECOVERY RECTI

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BL FEATURES GALAXY ELECTRICAL SS22A---SS210A REVERSE VOLTAGE: 20 - 100 V FORWARD CURRENT: 2.0 A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS (DO-214A

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BL FEATURES GALAXY ELECTRICAL MBRF830 - - - MBRF8100 VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A SCHOTTKY BARRIER RECTIFIER High s urge capacity. For

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BL GALAXY ELECTRICAL SMALL SIGNAL SCHOTTKY DIODE FEATURES For general purpose applications Metal silicon schottky barrier device which is protected by

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BLGALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,l

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BLGALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,l

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BL FEATURES Low cos t GALAXY ELECTRICAL BYD33D(Z)---BYD33M(Z) VOLTAGE RANGE: 200 --- 1000 V CURRENT: 1.3 A www.DataSheet4U.com FAST RECOVERY RECTI

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BL GALAXY ELECTRICAL FAST RECOVERY RECTIFIERS BYD33D(Z)---BYD33M(Z) VOLTAGE RANGE: 200 --- 1000 V CURRENT: 1.3 A FEATURES Low cost Diffus ed junctio

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BL FEATURES GALAXY ELECTRICAL SS22A---SS210A REVERSE VOLTAGE: 20 - 100 V FORWARD CURRENT: 2.0 A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS (DO-214A

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BL FEATURES GALAXY ELECTRICAL MBRF830 - - - MBRF8100 VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A SCHOTTKY BARRIER RECTIFIER High s urge capacity. For

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www.DataSheet4U.com BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,

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BL GALAXY ELECTRICAL FAST RECOVERY RECTIFIERS BYD33D(Z)---BYD33M(Z) VOLTAGE RANGE: 200 --- 1000 V CURRENT: 1.3 A FEATURES Low cost Diffus ed junctio

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BL GALAXY ELECTRICAL SUPER FAST RECTIFIER FEATURES Low cost Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,I

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BL GALAXY ELECTRICAL SUPER FAST RECTIFIER BYM26A(Z) --- BYM26E(Z) VOLTAGE RANGE: 200 --- 1000 V CURRENT: 2.3 A FEATURES Low cost Low leakage Low for

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BL FEATURES GALAXY ELECTRICAL MBRF830 - - - MBRF8100 VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A SCHOTTKY BARRIER RECTIFIER High s urge capacity. For

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BL FEATURES GALAXY ELECTRICAL MBRF830 - - - MBRF8100 VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A SCHOTTKY BARRIER RECTIFIER High s urge capacity. For

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