Schottky Barrier Rectifier FEATURES ·Common Catho.
Inchange Semiconductor
3
HBR30100 - Schottky Barrier Rectifier
Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss,high Efficiency ·High Operating Junction Temperature ·Guarding for Overv.
Jilin Sino
2
HBR30100 - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15）A 100 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.
Jilin Sino
2
HBR30100ZR - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15）A 100 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.
Jilin Sino
2
HBR30100F - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15）A 100 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.
Jilin Sino
2
HBR30100HFR - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15）A 100 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.
Jilin Sino
2
HBR30100AB - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15）A 100 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.
Inchange Semiconductor
1
HBR30100PT - Schottky Barrier Rectifier
Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss,high Efficiency ·High Operating Junction Temperature ·Guarding for Overv.
Jilin Sino
1
HBR30100Z - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15）A 100 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.
Jilin Sino
1
HBR30100FR - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15）A 100 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.
Jilin Sino
1
HBR30100HF - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15）A 100 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.
Jilin Sino
1
HBR30100ABR - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR30100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15）A 100 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.