HER103G Datasheet | Specifications & PDF Download

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www.DataSheet4U.com WTE POWER SEMICONDUCTORS HER101G – HER108G Pb 1.0A GLASS PASSIVATED ULTRAFAST DIODE Features Glass Passivated Die Co

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HER101G-HER108G 1.0AMP. Glass Passivated High Efficient Rectifiers DO-41 Features Glass passivated chip junction. High efficiency, Low VF High curr

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere HER101G TH

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MCC Features • • • • High Surge Current Capability High Reliability Low Forward Voltage Drop High Current Capability
     omponents 2120

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Elektronische Bauelemente HER101G ~ HER107G VOLTAGE 50 ~ 1000 V 1 A, Glass Passivated High Efficiency Rectifiers FEATURES z Low forward voltage drop

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Silicon Rectifier HER101G THRU HER108G 1.0A Leaded Type High Effciency Rectifiers - 50V-1000V Features • Axial lead type devices for through hole de

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HER101G – HER108G Taiwan Semiconductor 1A, 50V - 1000V High Efficient Rectifier FEATURES ● AEC-Q101 qualified available ● Glass passivated chip junc

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MCC TM Micro Commercial Components
     omponents 21201 Itasca Street Chatsworth  # $ % #

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