HMS10DN10Q (H&M Semiconductor)
Dual N-Channel Enhancement Mode MOSFET
HMS10DN10Q
Dual N-Channel Enhancement Mode MOSFET
Feature
100V/10A RDS(ON)= 74 mΩ(typ) @VGS = 10V RDS(ON)= 90 mΩ(typ) @VGS = 4.5V
100% Avalanche T
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