HOTTECH Datasheet | Specifications & PDF Download

Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent RDS(ON

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SCHOTTKY BARRIER DIODE 1N5711W FEATURES  Low Forward Voltage  Fast Switching Time  Low Reverse Capacitance  Small Surface Mount device  PN Junc

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ZENER DIODES FEATURES For use in stabilizing and clipping circuits with high power rating.Standard zener voltage tolerance is ±10%. Add suffix A for

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FEATURES The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. Thi

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BIPOLAR TRANSISTOR (PNP) FEATURES  Complementary to NPN 2SD313  Low Collector-Emitter Saturation Voltage MECHANICALDATA  Case:TO-220  Case Materia

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BIPOLAR TRANSISTOR (NPN) FEATURES  Complementary to KTA1273  High Current Application  Surface Mount device MECHANICAL DATA  Case: SOT-89  Case

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Plastic-Encapsulate Transistors FEATURES • Complementary To KTC3875. • Excellent HFELinearity. • Low noise. KTA1504(PNP) Maximum Ratings (TA=25 Par

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FEATURES • High Voltage • Complement to BC546,BC547,BC548 Plastic-Encapsulate Transistors BC556/BC557/BC558 (PNP) Maximum Ratings (Ta=25 unless othe

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REPLACEMENT TYPE : MMBT2907A FEATURES  Epitaxial Planar Die Construction  Complementary NPN Type Available(HABT2222A) HABT2907A(PNP) SWITCHING TRAN

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Plastic-Encapsulate Transistors FEATURES • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency

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REPLACEMENT TYPE :MMBT4401 FEATURES  Switching Transistor HABT4401(NPN) SWITCHING TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Pa

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Plastic-Encapsulate Transistors FEATURES Complementary To S9015W. Excellent HFE Linearity. Power dissipation.(P C=0.2W) Marking:J6 MAXIMUM RATINGS

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FEATURES  Glass Passivated Die Construction  Super-Fast Recovery Time For High Efficiency  Low Forward Voltage Drop and High Current Capability  I

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Plastic-Encapsulate Mosfets FEATURES The AO3407 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suit

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Features • Total power dissipation : max. 300 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5% Absolute M

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Plastic-Encapsulate Mosfets FEATURES The AO3403 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suit

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FEATURES  Planar Die Construction.  200mW Power Dissipation  Zener Voltages From 2.4V - 43V  5% Standard Vz Tolerance  Designed for Surface Mount

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ZENER DIODES FEATURES For use in stabilizing and clipping circuits with high power rating.Standard zener voltage tolerance is ±10%. Add suffix A for

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Features • Total power dissipation : max. 300 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5% Absolute M

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FEATURES  Planar Die Construction.  200mW Power Dissipation  Zener Voltages From 2.4V - 43V  5% Standard Vz Tolerance  Designed for Surface Mount

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