HOTTECH Datasheet | Specifications & PDF Download

Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent RDS(ON

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FEATURES The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. Thi

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Plastic-Encapsulate Mosfets FEATURES The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell den

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FEATURES • High Voltage • Complement to BC546,BC547,BC548 Plastic-Encapsulate Transistors BC556/BC557/BC558 (PNP) Maximum Ratings (Ta=25 unless othe

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BIPOLAR TRANSISTOR (PNP) FEATURES  Complementary to NPN 2SD313  Low Collector-Emitter Saturation Voltage MECHANICALDATA  Case:TO-220  Case Materia

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ZENER DIODES FEATURES For use in stabilizing and clipping circuits with high power rating.Standard zener voltage tolerance is ±10%. Add suffix A for

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BIPOLAR TRANSISTOR (NPN) FEATURES  Complementary to KTA1273  High Current Application  Surface Mount device MECHANICAL DATA  Case: SOT-89  Case

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Plastic-Encapsulate Mosfets FEATURES High density cell design for low RDS(ON) Voltage controlled small signal switch. Rugged and reliable. High satu

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ZENER DIODES FEATURES For use in stabilizing and clipping circuits with high power rating.Standard zener voltage tolerance is ±10%. Add suffix A for

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Plastic -Encapsulate Diodes FEATURES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leaka

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Plastic -Encapsulate Diodes FEATURES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leaka

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Plastic-Encapsulate Transistors FEATURES Complementary To S9015W. Excellent HFE Linearity. Power dissipation.(P C=0.2W) Marking:J6 MAXIMUM RATINGS

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FEATURES  Glass Passivated Die Construction  Super-Fast Recovery Time For High Efficiency  Low Forward Voltage Drop and High Current Capability  I

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Plastic-Encapsulate Transistors FEATURES • High power gain KTC3879 (NPN) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter

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FEATURES  Glass Passivated Die Construction  Super-Fast Recovery Time For High Efficiency  Low Forward Voltage Drop and High Current Capability  I

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Plastic -Encapsulate Diodes FEATURES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leaka

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Plastic -Encapsulate Diodes FEATURES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leaka

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Plastic -Encapsulate Diodes FEATURES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leaka

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REPLACEMENT TYPE : 2SD965A HED965A(NPN) GENERAL PURPOSE TRANSISTOR FEATURES  Low Collector-Emitter Saturation Voltage  Large Collector Power Dissi

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FEATURES • High Voltage • Complement to BC546,BC547,BC548 Plastic-Encapsulate Transistors BC556/BC557/BC558 (PNP) Maximum Ratings (Ta=25 unless othe

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