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8205A - Dual N-Channel MOSFET
Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent RDS(ON.B507 - PNP Transistor
BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to NPN 2SD313 Low Collector-Emitter Saturation Voltage MECHANICALDATA Case:TO-220 Case Materia.S9014W - NPN Transistor
Plastic-Encapsulate Transistors FEATURES Complementary To S9015W. Excellent HFE Linearity. Power dissipation.(P C=0.2W) Marking:J6 MAXIMUM RATINGS .AO3401 - P-Channel MOSFET
FEATURES The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. Thi.C3205 - NPN Transistor
BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to KTA1273 High Current Application Surface Mount device MECHANICAL DATA Case: SOT-89 Case .AO3400 - N-Channel MOSFET
Plastic-Encapsulate Mosfets FEATURES The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell den.KTC3879 - NPN Transistor
Plastic-Encapsulate Transistors FEATURES • High power gain KTC3879 (NPN) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter .AO3402 - N-Channel MOSFET
FEATURES The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. Thi.BC557 - PNP Transistor
FEATURES • High Voltage • Complement to BC546,BC547,BC548 Plastic-Encapsulate Transistors BC556/BC557/BC558 (PNP) Maximum Ratings (Ta=25 unless othe.BZX84C3V3W - ZENER DIODES
FEATURES Planar Die Construction. 200mW Power Dissipation Zener Voltages From 2.4V - 43V 5% Standard Vz Tolerance Designed for Surface Mount.2SC2712 - NPN Transistor
Plastic-Encapsulate Transistors FEATURES Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 2SC2712 (NPN) MAXIMUM RATINGS (TA=25 Parameter.MMBTA42 - NPN Transistor
Plastic-Encapsulate Transistors FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) MMBTA42(NPN).1N4728 - Glass-Encapsulate Diodes
ZENER DIODES FEATURES For use in stabilizing and clipping circuits with high power rating.Standard zener voltage tolerance is ±10%. Add suffix "A" for.BZX84C6V2 - Plastic-Encapsulate Diodes
ZENER DIODES FEATURES Planar Die Construction. 350mW Power Dissipation Zener Voltages From 2.4V - 39V Ideally Suited For Automated Assembly Prcesses .1N4748 - Glass-Encapsulate Diodes
ZENER DIODES FEATURES For use in stabilizing and clipping circuits with high power rating.Standard zener voltage tolerance is ±10%. Add suffix "A" for.US1M - SURFACE MOUNT ULTRA FAST RECTIFIER
FEATURES Glass Passivated Die Construction Super-Fast Recovery Time For High Efficiency Low Forward Voltage Drop and High Current Capability I.1N4732 - Glass-Encapsulate Diodes
ZENER DIODES FEATURES For use in stabilizing and clipping circuits with high power rating.Standard zener voltage tolerance is ±10%. Add suffix "A" for.BZV55C3V3 - ZENER DIODES
ZENER DIODES FEATURES Low cost Smal lsize Glass sealed MECHANICAL DATA Case: SOD-80 glass case Terminals: solderable per MIL - STD - 202, method 208 P.HED1005 - GENERAL PURPOSE TRANSISTOR
REPLACEMENT TYPE : 2SD1005 FEATURES Small Flat Package High Breakdown Voltage Excellent DC Current Gain Linearity HED1005(NPN) GENERAL PURPOSE .2SA1162 - PNP Transistor
FEATURES Low noise : NF= 1dB(Typ.),10dB (Max.) Complementary to 2SC2712. Small Package. Plastic-Encapsulate Transistors 2SA1162(PNP) MAXIMUM RATINGS.