HY3506P/W N-Channel Enhancement Mode MOSFET Featu.
HY3506P - N-Channel MOSFET
HY3506P/B N-Channel Enhancement Mode MOSFET Features • 60V/190A RDS(ON) = 3.5 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.HY3506P - N-Channel Enhancement Mode MOSFET
HY3506P/W N-Channel Enhancement Mode MOSFET Features • • • • 60V/190A RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V Pin Description 100% avalanche tested Relia.