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HYG010N06NS1TA Datasheet, Features, Application

HYG010N06NS1TA N-Channel Enhancement Mode MOSFET

HYG010N06NS1TA Feature  60V/465A RDS(ON)=0.75 m.

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HYG010N06NS1TA - N-Channel Enhancement Mode MOSFET

 HYG010N06NS1TA Feature  60V/465A RDS(ON)=0.75 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS.
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