HYG010N06NS1TA Datasheet | Specifications & PDF Download

HYG010N06NS1TA N-Channel Enhancement Mode MOSFET

HYG010N06NS1TA Feature  60V/465A RDS(ON)=0.75 m.

HYG010N06NS1TA (HUAYI)

N-Channel Enhancement Mode MOSFET

HYG010N06NS1TA Feature  60V/465A RDS(ON)=0.75 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS

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