
HYG012N03LR1P (HOOYI)
N-Channel Enhancement Mode MOSFET
HYG012N03LR1P/B
N-Channel Enhancement Mode MOSFET
Feature
30V/250A RDS(ON)= 1.2 mΩ (typ.) @VGS = 10V RDS(ON)= 1.4 mΩ (typ.) @VGS = 4.5V
100% Ava
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