HYG015N03LR1B Datasheet | Specifications & PDF Download

HYG015N03LR1B N-Channel Enhancement Mode MOSFET

HYG015N03LR1P/B Feature  30V/170A RDS(ON)=1.8m.

HYG015N03LR1P/B Feature  30V/170A RDS(ON)=1.8mΩ(typ.)@VGS=10V RDS(ON)=2.4mΩ(typ.)@VGS=4.5V  100% Avalanche Tested  Reliable and Rugged  Lead-Free

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