
HYG015N10NS1TA (HOOYI)
N-Channel Enhancement Mode MOSFET
HYG015N10NS1TA
Feature
100V/380A RDS(ON)=1.2 mΩ(typ.)@VGS = 10V
100% Avalanche Tested Reliable and Rugged Halogen-Free Devices Available
(RoH
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