
HYG016N04NR1P (HUAYI)
N-Channel Enhancement Mode MOSFET
HYG016N04NR1P/B
N-Channel Enhancement Mode MOSFET
Feature
45V/240A RDS(ON)= 1.4 mΩ(typ.) @VGS = 10V
100% Avalanche Tested Reliable and Rugged
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