
HYG017N10NS1TA - N-Channel Enhancement Mode MOSFET
HYG017N10NS1TA
Feature
100V/330A RDS(ON)=1.6mΩ(typ.)@VGS = 10V
100% Avalanche Tested Reliable and Rugged Halogen-Free Devices Available
(RoHS
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HYG017N10NS1TA Feature 100V/330A RDS(ON)=1.6m.
HYG017N10NS1TA Distributor