HYG017N10NS1TA Datasheet | Specifications & PDF Download

HYG017N10NS1TA N-Channel Enhancement Mode MOSFET

HYG017N10NS1TA Feature  100V/330A RDS(ON)=1.6m.

N-Channel Enhancement Mode MOSFET

HYG017N10NS1TA Feature  100V/330A RDS(ON)=1.6mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS

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