
HYG020N06LS1P (HUAYI)
N-Channel Enhancement Mode MOSFET
HYG020N06LS1P/B
Microelectronics
N-Channel Enhancement Mode MOSFET
Feature
60V/250A RDS(ON)= 2 mΩ(typ.) @VGS = 10V RDS(ON)= 2.5 mΩ(typ.) @VGS = 4
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