HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSF.
HUAYI
HYG022N03LQ1V - N-Channel MOSFET
HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala.
