HYG022N10NS1TA Datasheet | Specifications & PDF Download

HYG022N10NS1TA N-Channel Enhancement Mode MOSFET

HYG022N10NS1TA Feature  100V/249A RDS(ON)=2.2 m.

HYG022N10NS1TA (HUAYI)

N-Channel Enhancement Mode MOSFET

HYG022N10NS1TA Feature  100V/249A RDS(ON)=2.2 mΩ (typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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