HYG032N08NS1B Datasheet | Specifications & PDF Download

HYG032N08NS1B N-Channel Enhancement Mode MOSFET

HYG032N08NS1P/B Feature  80V/180A RDS(ON)=3 m.

HYG032N08NS1B6 N-Channel Enhancement Mode MOSFET Feature  80V/200A RDS(ON)=2.5 mΩ(typ.)@VGS=10V  100% Avalanche Tested  Reliable and Rugged  Hal

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HYG032N08NS1P/B Feature  80V/180A RDS(ON)=3 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable

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