HYG035N10NS1B Datasheet | Specifications & PDF Download

HYG035N10NS1B N-Channel Enhancement Mode MOSFET

HYG035N10NS1P/B Feature  100V/180A RDS(ON)=3.2.

HYG035N10NS1P/B Feature  100V/180A RDS(ON)=3.2mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avail

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