HUAYI
HYG042N10NS1B - N-Channel Enhancement Mode MOSFET
HYG042N10NS1P/B
Feature
100V/160A RDS(ON)=3.5mΩ(typ.) @ VGS = 10V
100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Avail
Rating:
1
★
(3 votes)
