HYG046N04LQ1D/U/V N-Channel Enhancement Mode MOSF.
HUAYI
HYG046N04LQ1V - N-Channel MOSFET
HYG046N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature 40V/75A RDS(ON)= 4.4mΩ(typ.)@VGS = 10V RDS(ON)= 6.1mΩ(typ.)@VGS = 4.5V 100% Avalanch.
