HYG050N10NS1P Datasheet | Specifications & PDF Download

HYG050N10NS1P N-Channel Enhancement Mode MOSFET

HYG050N10NS1P Feature  100V/135A RDS(ON)=4.4m.

HYG050N10NS1P Feature  100V/135A RDS(ON)=4.4mΩ (typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Availa

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