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HYG053N10NS1P Datasheet | Specifications & PDF Download

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HYG053N10NS1P N-Channel MOSFET

HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 .

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HYG053N10NS1P (HUAYI)

N-Channel MOSFET

HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH
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