HYG063N09NS1P Datasheet | Specifications & PDF Download

HYG063N09NS1P N-Channel Enhancement Mode MOSFET

HYG063N09NS1P Feature  90V/120A RDS(ON)=5.5 mΩ.

HYG063N09NS1P - N-Channel Enhancement Mode MOSFET

HYG063N09NS1P Feature  90V/120A RDS(ON)=5.5 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS C

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