HYG063N09NS1P (HUAYI)
N-Channel Enhancement Mode MOSFET
HYG063N09NS1P
Feature
90V/120A RDS(ON)=5.5 mΩ(typ.)@VGS = 10V
100% Avalanche Tested Reliable and Rugged Halogen-Free Devices Available
(RoHS C
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HYG063N09NS1P Feature 90V/120A RDS(ON)=5.5 mΩ.
N-Channel Enhancement Mode MOSFET
HYG063N09NS1P Distributor
