
HYG067N07NQ1D (HUAYI)
N-Channel Enhancement Mode MOSFET
HYG067N07NQ1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
68V/70A RDS(ON)= 6.8mΩ(typ.)@VGS = 10V
100% Avalanche Tested Reliable and Rugged
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