
HYG072N10LS1P - N-Channel Enhancement Mode MOSFET
HYG072N10LS1P
Feature
100V/80A RDS(ON)= 6.7 mΩ(typ.) @ VGS = 10V RDS(ON)= 9.6mΩ(typ.) @ VGS = 4.5V
100% Avalanche Tested Reliable and Rugged L
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HYG072N10LS1P Feature 100V/80A RDS(ON)= 6.7 m.
HYG072N10LS1P Distributor