HYG080N03LA1S Datasheet | Specifications & PDF Download

HYG080N03LA1S N-Channel Enhancement Mode MOSFET Feature  30V/12A RDS(ON)=7.3mΩ(typ.)@VGS = 10V RDS(ON)=10.1mΩ(typ.)@VGS = 4.5V  100% Avalanche Tes

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