HUAYI
HYG080N03LA1S - N-Channel MOSFET
HYG080N03LA1S
N-Channel Enhancement Mode MOSFET
Feature
30V/12A RDS(ON)=7.3mΩ(typ.)@VGS = 10V RDS(ON)=10.1mΩ(typ.)@VGS = 4.5V
100% Avalanche Tes
Rating:
1
★
(3 votes)
