
HYG080N10LS1D (HUAYI)
N-Channel Enhancement Mode MOSFET
HYG080N10LS1D
Single N-Channel Enhancement Mode MOSFET
Feature
100V/62A RDS(ON)= 7.6mΩ (typ.) @ VGS = 10V RDS(ON)= 11.1mΩ (typ.) @ VGS = 4.5V
10
(15 views)