HYG080ND03LA1S Datasheet | Specifications & PDF Download

HYG080ND03LA1S Dual N-Channel Enhancement Mode MOSFET Feature  30V/11A RDS(ON)=9.5 mΩ(typ.)@VGS = 10V RDS(ON)=12.5 mΩ(typ.)@VGS = 4.5V  100% Avala

(14 views)