HYG090P03LA1C1 (HUAYI)
P-Channel Enhancement Mode MOSFET
HYG090P03LA1C1
Single P-Channel Enhancement Mode MOSFET
Feature
z -30V/-40A RDS(ON)= 7.9 mΩ (typ.) @VGS = -10V RDS(ON)= 10.5 mΩ (typ.) @VGS = -4.5V
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HYG090P03LA1C1 Single P-Channel Enhancement Mode .
P-Channel Enhancement Mode MOSFET
HYG090P03LA1C1 Distributor
