HYG110N03LR1S Datasheet | Specifications & PDF Download

HYG110N03LR1S N-Channel Enhancement Mode MOSFET Feature z 30V/10A RDS(ON)=8.5mΩ(typ.) @VGS = 10V RDS(ON)=12.5 mΩ(typ.) @VGS = 4.5V z 100% Avalanche

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