HYG170ND03LA1C1 Datasheet | Specifications & PDF Download

HYG170ND03LA1C1 Dual N-Channel Enhancement Mode MOSFET Feature  30V/24A RDS(ON)= 15.6 mΩ(typ) @VGS = 10V RDS(ON)= 20.5 mΩ(typ) @VGS = 4.5V  100% A

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