HYG170ND03LA1S Datasheet | Specifications & PDF Download

HYG170ND03LA1S Dual N-Channel Enhancement Mode MOSFET Feature  30V/9A RDS(ON)= 14.5 mΩ(typ.)@VGS = 10V RDS(ON)= 19.7 mΩ(typ.)@VGS = 4.5V  100% Ava

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