HYG170ND03LR1S Datasheet | Specifications & PDF Download

HYG170ND03LR1S Dual N-Channel Enhancement Mode MOSFET Feature  30V/9.5A RDS(ON)= 12.9 mΩ(typ.) @VGS = 10V RDS(ON)= 19.3 mΩ(typ.) @VGS = 4.5V  100%

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