HYG180N10LS1P (HOOYI)
N-Channel Enhancement Mode MOSFET
HYG180N10LS1P&B
Single N-Channel Enhancement Mode MOSFET
Feature
100V/50A RDS(ON)= 16.5mΩ (typ.) @ VGS = 10V RDS(ON)= 21mΩ (typ.) @ VGS =6V
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HYG180N10LS1P&B Single N-Channel Enhancement Mode.
N-Channel Enhancement Mode MOSFET
HYG180N10LS1P Distributor
