HYG200P10LR1B Datasheet | Specifications & PDF Download

HYG200P10LR1B P-Channel Enhancement Mode MOSFET

HYG200P10LR1P/B Feature  -100V/-80A RDS(ON)= 2.

HYG200P10LR1P/B Feature  -100V/-80A RDS(ON)= 20 mΩ(typ.) @ VGS = -10V RDS(ON)= 24 mΩ(typ.) @ VGS = -4.5V  100% Avalanche Tested  Reliable and Rugg

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