HYG650N10LS1D Datasheet | Specifications & PDF Download

HYG650N10LS1D Single N-Channel Enhancement Mode MOSFET Feature  100V/14A RDS(ON)= 51mΩ (typ.) @ VGS = 10V RDS(ON)= 68mΩ (typ.) @ VGS = 6V  100% Av

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