HYG650N10LS1D Single N-Channel Enhancement Mode M.
HYG650N10LS1D - Single N-Channel Enhancement Mode MOSFET
HYG650N10LS1D Single N-Channel Enhancement Mode MOSFET Feature 100V/14A RDS(ON)= 51mΩ (typ.) @ VGS = 10V RDS(ON)= 68mΩ (typ.) @ VGS = 6V 100% Av.