HYG800P10LR1S (HUAYI)
P-Channel Enhancement Mode MOSFET
HYG800P10LR1S
Feature
-100V/-8A RDS(ON)= 72 mΩ (typ.) @ VGS = -10V RDS(ON)= 80 mΩ (typ.) @ VGS = -4.5V
100% Avalanche Tested Reliable and Rugged
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HYG800P10LR1S Feature -100V/-8A RDS(ON)= 72 m.
P-Channel Enhancement Mode MOSFET
HYG800P10LR1S Distributor
