IH-10 Datasheet | Specifications & PDF Download

1 1.A 2.K 3.A 72  Available RoHS* COMPLIANT 1 1.A 2.K 3.A 72 ) VRRM IF(AV) IFSM EAS IRRM dv/dt TJ,TSTG VBR IR=10mA TA=25 VF IF=5A IF=1

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S B D T y p e : FCH10A06 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Volta

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1 1.A 2.K 3.A 72  Available RoHS* COMPLIANT 1 1.A 2.K 3.A 72 ) VRRM IF(AV) IFSM EAS IRRM dv/dt TJ,TSTG VBR IR=10mA TA=25 VF IF=5A IF=1

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Free Datasheet http://www.Datasheet4U.com FHP10N60 N MOS 。 AC-DC ，DC-DC，HPMW 。 ★ 10A,600V,RDS(on)(）0.7Ω ★ 、 ★ FHP10N60 （TC=25℃） —

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www.DataSheet.co.kr SBD T y p e : FCH20 FCH20A 20A10 OUTLINE DRAWING FEATURES *TO-220AB Case *Fully Molded *Dual Diodes – Cathode Common *Low Forw

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Fast Recovery Diode FCF10D60 TO-220FullMold ■ / Features ・ VF Low forward voltage drop ・ IR Low leakage current ・ ソフトリカバリー Soft recovery RoHS ・ RoHS

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10A Avg. 100 Volts SBD FCH10A10 0˚ θ 180˚ CONDUCTION ANGLE FORWARD CURRENT VS. VOLTAGE 20 FCH10A10 (per Arm) AVERAGE FORWARD POWER DISSIPATIO

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S B D T y p e : FCQ10A03L FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Extremely Low Forward Voltage Drop

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HRLP120N10H Dec 2016 HRLP120N10H 100V N-Channel Trench MOSFET Features  High Speed Power Switching, Logic Level  Enhanced Body diode dv/dt capabi

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S B D T y p e : FCQ10A04 FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power

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QS043-402-20381（2/5） ＩＧＢＴ Ｍｏｄｕｌｅ－Ｄｕａｌ □ ： ＣＩＲＣＵＩＴ ＰＤＭＢ１００ＢＳ１２ １００ Ａ，１２００Ｖ □ ： ＯＵＴＬＩＮＥ ＤＲＡＷＩＮＧ 94.0 80 ±0.25 ＰＤＭＢ１００ＢＳ１2Ｃ 12.0 11.0 12.0 11

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DIODE Type : 10DDA20 1A 200V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 5

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1A Avg. 100 Volts Standard Recovery Diode 10DDA10 INSTANTANEOUS FORWARD CURRENT (A) 10 5 2 1 0.5 0.2 0.1 0 FORWARD CURRENT VS. VOLTAGE 10DDA10 Tj

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10A 200V Anode Common SBD Type : FRH10A20 OUTLINE DRAWING For High Frequency Rectification FEATURES * High VRM SBD * Low Forward Voltage Drop and

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3A Avg. 100 Volts SBD 31DQ10 INSTANTANEOUS FORWARD CURRENT (A) AVERAGE REVERSE POWER DISSIPATION (W) 20 10 5 2 1 0.5 0.2 0 FORWARD CURRENT VS. VO

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HDS10U20AW August 2015 HDS10U20AW Ultra Fast Recovery Diode General Description The HDS10U20AW is ideally as boost diode in discontinuous or critica

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HSC106D/M HSC106D/M Silicon Controlled Rectifier FEATURES  Repetitive Peak Off-State Voltage (VDRM=400V/600V)  R.M.S On-State Current (IT(RMS)=4.0A

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