IH-15 Datasheet | Specifications & PDF Download

S B D T y p e : FCH10A15 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Volta

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DIODE MODULE FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 150

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Grade Parameter *1 Repetitive Peak Reverse Voltage *1 Non Repetitive Peak Reverse Voltage VRSM 900 V Symbol VRRM PD150KN8 800 Unit V Parameter *1 Ave

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www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ FORWARD CURRENT VS. VOLTAGE 2000 1000 AVERAGE FORWARD POWER DISSIPATION PD150S8 Per

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Soft Switching Series IHW15N120R q C Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low for

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Rating: 1 ★ (5 votes)

Fllstandssensoren Schaltverstärker Baureihe CLC Bezeichnung Artikelnummer Betriebsspannung Stromaufnahme Ausgang Umgebungstemperatur Gehäusematerial S

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DIODE MODULE FEATURES * Cathode & Anode Common * 3 Phase Half Bridge Circuit * High Surge Capability * UL Recognized, File No. E187184 150A/800V PE1

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IGBT MODULE CIRCUIT H-Bridge 150A 600V OUTLINE DRAWING PBMB150A6 8- fasten- tab No 110 www.DataSheet4U.com Dimension(mm) Approximate Weight : 430

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IHW15N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward

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www.DataSheet.co.kr SBD T y p e : FCH20 FCH20A 20A15 OUTLINE DRAWING FEATURES *TO-220AB Case *Fully Molded *Dual Diodes – Cathode Common *Low Forw

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DIODE MODULE FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 150

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NGTB15N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provi

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Free Datasheet http://www.datasheet.in/ Free Datasheet http://www.datasheet.in/ Free Datasheet http://www.datasheet.in/ Free Datasheet http://www.d

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8A Avg. 150 Volts SBD FCH08A15 0˚ 180˚ θ FORWARD CURRENT VS. VOLTAGE 20 FCH08A15 (per Arm) CONDUCTION ANGLE AVERAGE FORWARD POWER DISSIPATION

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Rating: 1 ★ (4 votes)

HCS50R150V July 2014 HCS50R150V 500V N-Channel Super Junction MOSFET BVDSS = 500 V RDS(on) typ = 0.13 ȍ ID = 22 A FEATURES ‰ Originative New Desig

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