IH-15 Datasheet | Specifications & PDF Download

1550nm FP SM coaxial laser diode Model: LSFLD155 Features:  MQW-FP, High reliable  Single mode  Good high temperature characteristic  Built-in mon

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www.vishay.com SiHG150N60E Vishay Siliconix E Series Power MOSFET D TO-247AC S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(o

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www.vishay.com SiHG155N60EF Vishay Siliconix EF Series Power MOSFET With Fast Body Diode D TO-247AC S D G G S N-Channel MOSFET PRODUCT SUMMARY V

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ＩＧＢＴ Ｍｏｄｕｌｅ－Ｄｕａｌ □ ： ＣＩＲＣＵＩＴ １５０ Ａ，６００Ｖ □ ： ＯＵＴＬＩＮＥ ＤＲＡＷＩＮＧ QS043-402-20398（2/5） ＰＤＭＢ１５０Ｅ６ ＰＤＭＢ１５０Ｅ６Ｃ (C2E1) 1 (E2) 2 7(G2) 6(E2) (C1) 3

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Soft Switching Series IHW15N120R q C Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low for

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www.DataSheet.co.kr SBD T y p e : FCH20 FCH20A 20A15 OUTLINE DRAWING FEATURES *TO-220AB Case *Fully Molded *Dual Diodes – Cathode Common *Low Forw

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S B D T y p e : FCH10A15 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Volta

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HCA60R150 Dec 2019 HCA60R150 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent

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HRP105N15H Jan 2016 HRP105N15H 150V N-Channel Trench MOSFET Features ‰ High Speed Power Switching, Logic Level ‰ Enhanced Body diode dv/dt capabili

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HCA60R150T Super Junction MOSFET Jan 2016 HCA60R150T 600V N-Channel Super Junction MOSFET Features ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low sw

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Free Datasheet http://www.datasheet.in/ Free Datasheet http://www.datasheet.in/ Free Datasheet http://www.datasheet.in/ Free Datasheet http://www.d

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IGBT MODULE CIRCUIT Dual 150A 600V PDMB150A6 OUTLINE DRAWING 4- fasten- tab No 110 Dimension(mm) Approximate Weight : 430g MAXMUM RATINGS (Tc=25°

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HCS60R115S Dec 2019 HCS60R115S 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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HCS60R150T Super Junction MOSFET Jan 2016 HCS60R150T 600V N-Channel Super Junction MOSFET Features ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low sw

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www.vishay.com SiHG15N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC

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DIODE MODULE FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 150

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www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ FORWARD CURRENT VS. VOLTAGE 5000 2000 AVERAGE FORWARD POWER DISSIPATION PD150S16 Pe

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IHD Vishay Dale Filter Inductors, High Current, Axial Leaded ELECTRICAL SPECIFICATIONS Inductance: Measured at 1.0 V with zero DC current Incremental

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www.DataSheet4U.com IHD Vishay Dale Filter Inductors High Current FEATURES • Printed circuit mounting (axial leads) • Protected by polyolefin tubing

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