IMBG120R017M2H DataSheet
Infineon
IMBG120R017M2H - Silicon Carbide MOSFET
Sep 22, 2024
·
13 Hits
• VDSS = 1200 V at Tvj = 25°C • IDDC = 76 A at TC = 100°C • RDS(on) = 17.1 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload opera...
Since 2006. D4U Semicon. |
Contact Us
|
Privacy Policy
This website uses cookies or similar technologies, to enhance your browsing experience and provide personalized recommendations.
By continuing to use our website, you agree to our
Privacy Policy
Accept
Infineon
